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| SUM65N20-30 New Product Vishay Siliconix N-Channel 200-V (D-S) 175_C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 200 D TrenchFETr Power MOSFETS D 175_C Junction Temperature D New Low Thermal Resistance Package rDS(on) (W) ID (A) 65 a 0.030 @ VGS = 10 V APPLICATIONS D Automotive - 42-V EPS and ABS - DC/DC Conversion - Motor Drives D Isolated DC/DC converters - Primary-Side Switch - High Voltage Synchronous Rectifier D TO-263 G G DS S N-Channel MOSFET Top View SUM65N20-30 ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C) _ Pulsed Drain Current Avalanche Current Repetitive Avalanche Energyb Maximum Power Dissipationb Operating Junction and Storage Temperature Range L = 0.1 mH TC = 25_C TA = 25_Cd TC = 25_C TC = 125_C Symbol VDS VGS ID IDM IAR EAR PD TJ, Tstg Limit 200 "20 65a 37a 140 35 61 375c 3.75 -55 to 175 Unit V A mJ W _C THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient Junction-to-Case (Drain) Notes a. Package limited. b. Duty cycle v 1%. c. See SOA curve for voltage derating. d. When mounted on 1" square PCB (FR-4 material). Document Number: 71702 S-04920--Rev. A, 15-Oct-01 www.vishay.com PCB Mount (TO-263)d Symbol RthJA RthJC Limit 40 0.4 Unit _C/W _ 1 SUM65N20-30 Vishay Siliconix New Product SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VDS = 0 V, ID = 250 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 160 V, VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = 160 V, VGS = 0 V, TJ = 125_C VDS = 160 V, VGS = 0 V, TJ = 175_C On-State Drain Currenta ID(on) VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 30 A Drain-Source On-State Resistancea rDS(on) VGS = 10 V, ID = 30 A, TJ = 125_C VGS = 10 V, ID = 30 A, TJ = 175_C Forward Transconductancea gfs VDS = 15 V, ID = 30 A 25 120 0.023 0.030 0.063 0.084 S W 200 V 2 4 "100 1 50 250 A m mA nA Symbol Test Condition Min Typ Max Unit Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Chargec Gate-Source Chargec Gate-Drain Chargec Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VDD = 100 V, RL = 1.5 W ID ^ 65 A, VGEN = 10 V, RG = 2.5 W VDS = 100 V, VGS = 10 V, ID = 85 A VGS = 0 V, VDS = 25 V, f = 1 MHz 5100 480 210 90 23 34 24 220 45 200 35 330 70 300 ns 130 nC pF Turn-On Delay Timec Rise Timec Turn-Off Delay Timec Fall Timec Source-Drain Diode Ratings and Characteristics (TC = 25_C)b Continuous Current Pulsed Current Forward Voltagea Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge IS ISM VSD trr IRM(REC) Qrr IF = 50 A, di/dt = 100 A/ms m IF = 65 A, VGS = 0 V 1.0 130 8 0.52 65 140 1.5 200 12 1.2 A V ns A mC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. www.vishay.com 2 Document Number: 71702 S-04920--Rev. A, 15-Oct-01 SUM65N20-30 New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 140 VGS = 10 thru 7 V 120 I D - Drain Current (A) 100 80 60 40 5V 20 4V 0 0 2 4 6 8 10 0 0 1 2 3 4 5 6 7 20 25_C -55_C I D - Drain Current (A) 6V 120 100 80 60 40 TC = 125_C 140 Vishay Siliconix Transfer Characteristics VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Transconductance 180 TC = -55_C r DS(on) - On-Resistance ( W ) 150 g fs - Transconductance (S) 25_C 120 125_C 90 0.060 On-Resistance vs. Drain Current 0.045 VGS = 10 V 0.030 60 0.015 30 0 0 20 40 60 80 100 120 0.000 0 20 40 60 80 100 120 ID - Drain Current (A) ID - Drain Current (A) Capacitance 7000 6000 Ciss C - Capacitance (pF) 5000 4000 3000 2000 1000 0 0 25 50 75 100 125 150 Crss 20 Gate Charge V GS - Gate-to-Source Voltage (V) 16 VDS = 100 V ID = 65 A 12 8 4 Coss 0 0 25 50 75 100 125 150 VDS - Drain-to-Source Voltage (V) Document Number: 71702 S-04920--Rev. A, 15-Oct-01 Qg - Total Gate Charge (nC) www.vishay.com 3 SUM65N20-30 Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature 3.0 VGS = 10 V ID = 30 A I S - Source Current (A) 100 Source-Drain Diode Forward Voltage 2.5 r DS(on) - On-Resistance (W) (Normalized) 2.0 TJ = 150_C 10 TJ = 25_C 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 175 1 0 0.3 0.6 0.9 1.2 TJ - Junction Temperature (_C) VSD - Source-to-Drain Voltage (V) Avalanche Current vs. Time 1000 240 Drain Source Breakdown vs. Junction Temperature 230 100 V (BR)DSS (V) 220 I Dav (a) ID = 1.0 mA IAV (A) @ TA = 25_C 10 210 200 1 190 IAV (A) @ TA = 150_C 0.1 0.00001 0.0001 0.001 0.01 0.1 1 180 -50 -25 0 25 50 75 100 125 150 175 tin (Sec) TJ - Junction Temperature (_C) www.vishay.com 4 Document Number: 71702 S-04920--Rev. A, 15-Oct-01 SUM65N20-30 New Product THERMAL RATINGS Vishay Siliconix Maximum Avalanche and Drain Current vs. Case Temperature 75 1000 Safe Operating Area Limited by rDS(on) 60 100 I D - Drain Current (A) 45 I D - Drain Current (A) 10 ms 100 ms 10 1 ms 10 ms 100 ms dc 30 15 1 TC = 25_C Single Pulse 0 0 25 50 75 100 125 150 175 0.1 0.1 1 10 100 1000 TC - Ambient Temperature (_C) VDS - Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Case 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 Square Wave Pulse Duration (sec) 10-1 1 Document Number: 71702 S-04920--Rev. A, 15-Oct-01 www.vishay.com 5 |
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